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Principles of carrier-selective contacts based on induced junctions

 
: Bivour, Martin; Meßmer, Christoph Alexander; Neusel, Lisa; Zähringer, Florian; Schön, Jonas; Glunz, Stefan W.; Hermle, Martin

:
Fulltext urn:nbn:de:0011-n-4774476 (750 KByte PDF)
MD5 Fingerprint: a4a3e4dcd98f4e1380ee91a4155b09f2
Created on: 26.1.2018


Smets, A.:
33rd European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2017 : Proceedings of the international conference held in Amsterdam, The Netherlands, 25 September - 29 September 2017
München: WIP, 2017
ISBN: 978-3-936338-47-8
ISBN: 3-936338-47-7
pp.348-352
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <33, 2017, Amsterdam>
European Commission EC
H2020; 727529; DISC
Double side contacted cells with innovative carrier-selective contacts
English
Conference Paper, Electronic Publication
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Photovoltaik; Silicium-Photovoltaik; Herstellung und Analyse von hocheffizienten Solarzellen; a Si; fundamental; heterojunction; inversion layer; simulation

Abstract
The applicability of different high (low) work function thin films for the formation of alternative hole (electron) selective contacts is currently (re-) explored for silicon solar cells. To provide some insight into contact schemes based on induced junctions their operation principles, important design parameters and losses are reviewed experimentally and with the help of numerical device simulations. Simulations with Sentaurus TCAD are used to address the importance of the work function and an efficient tunneling transport. It is highlighted that “non-selective” contacts will not obey the standard diode theory. This calls for an adapted loss analysis and one approach for this is presented for different hole contacts prepared by evaporation, sputtering, atomic layer deposition and PECVD. The results show that the “classical” electrical losses of selective contacts, like recombination and ohmic transport which are well quantified by J0 and the ohmic contact resistance, are not sufficient for the evaluation of “non-selective” contacts.

: http://publica.fraunhofer.de/documents/N-477447.html