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Optical and electrical characterization of poly-Si/SiOx contacts and their implications on solar cell design

: Feldmann, F.; Nicolai, M.; Müller, R.; Reichel, C.; Hermle, M.

Fulltext ()

Energy Procedia 124 (2017), pp.31-37
ISSN: 1876-6102
International Conference on Crystalline Silicon Photovoltaics (SiliconPV) <7, 2017, Freiburg>
Journal Article, Conference Paper, Electronic Publication
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Photovoltaik; Silicium-Photovoltaik; Herstellung und Analyse von hocheffizienten Solarzellen

The scope of this paper lies on the phenomenon of free-carrier absorption (FCA) in heavily phosphorus-doped poly-Si layers, applied at solar cells featuring poly-Si/SiOx passivating contacts at the rear. Firstly, FCA is investigated on test structures featuring poly-Si contacts of different thickness and doping level. Secondly, these passivating contacts are integrated into the rear of solar cells featuring a boron-diffused emitter at the front. The infrared (IR) response of the solar cells is analyzed and FCA losses are quantified. In agreement with theory, it is shown that Jsc losses due to FCA increase with poly-Si doping level and thickness. For instance, a total Jsc loss of about 0.5 mA/cm2 is obtained for a 145 nm thick poly-Si layer with a doping concentration of 1.9x10 exp 20 cm-3.