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Sputter-deposited WOx and MoOx for hole selective contacts

: Bivour, M.; Zähringer, F.; Ndione, P.; Hermle, M.

Fulltext urn:nbn:de:0011-n-4738511 (1.3 MByte PDF)
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Created on: 27.1.2018

Energy Procedia 124 (2017), pp.400-405
ISSN: 1876-6102
International Conference on Crystalline Silicon Photovoltaics (SiliconPV) <7, 2017, Freiburg>
Journal Article, Conference Paper, Electronic Publication
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Photovoltaik; Silicium-Photovoltaik; Herstellung und Analyse von hocheffizienten Solarzellen; oxide; contact; solar cell

Reactive sputter deposited tungsten and molybdenum oxide (WOx, MoOx) thin films are tested for their ability to form a hole selective contact for Si wafer based solar cells. A characterization approach based on analyzing the band bending induced in the c-Si absorber and the external and implied open-circuit voltage of test structures was used. It is shown that the oxygen partial pressure allows to tailor the selectivity to some extent and that a direct correlation between induced band bending and hole selectivity exists. Although the selectivity of the sputtered films is inferior to the reference films deposited by thermal evaporation, these results demonstrate a good starting point for further optimizations of sputtered WOx and MoOx towards higher work functions to improve the hole selectivity.