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Minority carrier diffusion length, lifetime and mobility in p-type GaAs and GaInAs

 
: Niemeyer, Markus; Ohlmann, Jens; Walker, Alexandre; Kleinschmidt, Peter; Lang, Robin; Hannappel, Thomas; Dimroth, Frank; Lackner, David

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Fulltext urn:nbn:de:0011-n-4706512 (861 KByte PDF)
MD5 Fingerprint: a6ed1c8fc58d46e472410c58943120af
Created on: 01.09.2018


Journal of applied physics 122 (2017), No.11, Art. 115702, 7 pp.
ISSN: 0021-8979
ISSN: 1089-7550
European Commission EC
H2020; 640873; CPVMatch
Concentrating Photovoltaic modules using advanced technologies and cells for highest efficiencies
English
Journal Article, Electronic Publication
Fraunhofer ISE ()
Materialien - Solarzellen und Technologie; Photovoltaik; III-V und Konzentrator-Photovoltaik; III-V Epitaxie und Solarzellen

Abstract
Minority carrier diffusion lengths and lifetimes were determined for p-type Ga(1-x)InxAs with an In-content of 0 ≤ x ≤ 0.53 by cathodoluminescence and time-resolved photoluminescence measurements respectively under low injection conditions; the resulting minority carrier mobilities are also reported. Highly p-doped samples (3 × 1018 cm−3) demonstrate a constant minority carrier diffusion length of (5.0 ± 0.7) μm and a constant lifetime of (3.7 ± 0.7) ns for an In-content up to 21%. Lower doped samples (3 × 1017 cm−3), on the other hand, show an increase in minority carrier diffusion length and lifetime with In-content from (6.3 ± 0.2) μm and (6.2 ± 0.5) ns respectively for GaAs to (14 ± 2) μm and (24.4 ± 0.5) ns respectively for Ga0.79In0.21As. Increasing the In-content to 53% results in a drop in the minority carrier diffusion length independently of the p-doping concentration .This is interpreted as a change in the energy of the Shockley-Read-Hall trap levels within the bandgap as a function of indium concentration.

: http://publica.fraunhofer.de/documents/N-470651.html