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Superacid-treated silicon surfaces: Extending the limit of carrier lifetime for photovoltaic applications

 
: Grant, N.E.; Niewelt, T.; Wilson, N.R.; Wheeler-Jones, E.C.; Bullock, J.; Al-Amin, M.; Schubert, M.C.; Veen, A.C. van; Javey, A.; Murphy, J.D.

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Fulltext urn:nbn:de:0011-n-4706206 (1.0 MByte PDF)
MD5 Fingerprint: 007250835025891cfba0455af36bc3b8
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Created on: 1.2.2018


IEEE Journal of Photovoltaics 7 (2017), No.6, pp.1574-1583
ISSN: 2156-3381
ISSN: 2156-3403
English
Journal Article, Electronic Publication
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Photovoltaik; Silicium-Photovoltaik; Charakterisierung von Prozess- und Silicium-Materialien; recombination; passivation

Abstract
Minimizing carrier recombination at interfaces is of extreme importance in the development of high-efficiency photovoltaic devices and for bulk material characterization. Here, we investigate a temporary room temperature superacid-based passivation scheme, which provides surface recombination velocities below 1 cm/s, thus placing our passivation scheme amongst state-of-the-art dielectric films. Application of the technique to high-quality float-zone silicon allows the currently accepted intrinsic carrier lifetime limit to be reached and calls its current parameterization into doubt for 1 Ω·cm n-type wafers. The passivation also enables lifetimes up to 65 ms to be measured in high-resistivity Czochralski silicon, which, to our knowledge, is the highest ever measured in Czochralski-grown material. The passivation strategies developed in this work will help diagnose bulk lifetime degradation under solar cell processing conditions and also help quantify the electronic quality of new passivation schemes.

: http://publica.fraunhofer.de/documents/N-470620.html