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2006
Conference Paper
Titel
PZT thick films for microsystems applications
Abstract
The preparation of PZT thick films on various substrates with thicknesses between 5 micron and 150 micron has been an area of active research for the last 15 years. Sintering of such films is difficult due to constrained sintering conditions, decomposition by PbO loss and possible reaction with the substrate material. The authors investigated into dense PZT thick films by combining PZT-PMN powder with a low melting point glass and the eutectic forming oxides Bi2O3 and ZnO. Densification is due to transient liquid phase jormation with additional incorporation of cations into the growing PZT grains during sintering. PZT thick films prepared by this method show excellent dielectric, ferroelectric and piezoelectric properties. They have been applied on various substrates, like Al2O3, ZrO2, low temperature co-fired ceramics (LTCC) and silicon wafers which are basis materials for microsystems technology. The influence of the substrate material on the PZT thick film properties and the role of buffer layers will be discussed. PZT thick films are of great interest as sensors and actuators for microsystems, optical and smart structure applications like for example piezoelectric pressure sensors, ultrasonic transducers, ferroelectric printing forms and deformable mirrors. Entnommen aus <a_href="http://www.fiz-technik.de/db/b_tema.htm" target="_blank">TEMA</a>