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Influence of Al doping concentration and annealing parameters on TiAl based ohmic contacts on 4H-SiC

Poster presented at International Conference on Silicon Carbide and Related Materials, September 17th - 22th, 2017, Washington, D.C., USA
 
: Kocher, Matthias; Rommel, Mathias; Erlbacher, Tobias; Bauer, Anton

:
Poster urn:nbn:de:0011-n-4677370 (1.0 MByte PDF)
MD5 Fingerprint: ed5667079c5f61e780db090234c3775f
Created on: 3.10.2017


2017, 1 Folie
International Conference on Silicon Carbide and Related Materials (ICSCRM) <17, 2017, Washington/DC>
English
Poster, Electronic Publication
Fraunhofer IISB ()

: http://publica.fraunhofer.de/documents/N-467737.html