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Highly efficient InP-based narrowband photodetectors for 40 to 85 GHz linear high power applications

: Bach, H.-G.; Beling, A.; Mekonnen, G.G.; Schmidt, D.; Schlaak, W.; Kunkel, R.; Seeger, A.; Stollberg, M.; Steingrüber, R.; Ebert, W.; Eckhardt, T.


IEEE Lasers and Electro-Optics Society; IEEE Electron Devices Society:
16th International Conference on Indium Phosphide and Related Materials, IPRM 2004. Proceedings : May 31 (Mon.) - June 4 (Fri.), 2004, Kagoshima Shimin Bunka Hall, Kagoshima, Japan
Piscataway, NJ: IEEE, 2004
ISBN: 0-7803-8595-0
International Conference on Indium Phosphide and Related Materials (IPRM) <16, 2004, Kagoshima>
Conference Paper
Fraunhofer HHI ()

The fabrication and characterization of InP-based narrowband photodetector OEICs and modules, covering the frequency range 38-90 GHz, is reported. The reverse bias tuneable detectors exhibit 0.55A/W peak responsivities at 80 GHz, equal to the DC value.