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Investigation of residual dislocations in VGF-grown Si-doped GaAs
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2005
Journal Article
Titel
Investigation of residual dislocations in VGF-grown Si-doped GaAs
Author(s)
Birkmann, B.
Stenzenberger, J.
Jurisch, M.
Härtwig, J.
Alex, V.
Müller, G.
Zeitschrift
Journal of Crystal Growth
DOI
10.1016/j.jcrysgro.2004.11.400
Language
English
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Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB