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Reconfigurable germanium transistors with low source-drain leakage for secure and energy-efficient doping-free complementary circuits

: Trommer, Jens; Heinzig, André; Slesazeck, Stefan; Mühle, Uwe; Löffler, Markus; Walter, Dennis; Mayr, Christian Georg; Mikolajick, Thomas; Weber, Walter Michael


Jena, D. ; IEEE Electron Devices Society:
75th Annual Device Research Conference (DRC) 2017 : University of Notre Dame, South Bend, Indiana, June 25-28, 2017
Piscataway, NJ: IEEE, 2017
ISBN: 978-1-5090-6327-7
ISBN: 978-1-5090-6328-4
ISBN: 978-1-5090-6329-1
Art. 7999426
Device Research Conference (DRC) <75, 2017, South Bend/Ind.>
Conference Paper
Fraunhofer IKTS ()

Germanium is a promising material for future VLSI devices, due to its high hole mobility. However, due to the low bandgap of 0.66 eV Ge based devices typically suffer from high reverse junction leakage und therefore high static power dissipation. In this paper, we apply a nanowire structure with multiple independent gates to suppress the leakage in off-direction to achieve off-current levels below 10-9 A/μm. In addition, the polarity of the same doping-free device can be dynamically switched between unipolar p- and n-type function, without the use of any dopants. This feature offers a variety of disrupting circuit design possibilities not accessible with CMOS, for example in the area of hardware security.