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2006
Journal Article
Titel
Silicon lens-coupled bow-tie InGaAs-based broadband terahertz sensor operating at room temperature
Alternative
Ein bei Zimmertemperatur arbeitender Si-Linsen-gekoppelter fliegeförmiger InGaAs-basierender Breitband Terahertz Sensor
Abstract
A passive detection scheme for broadband, 10 GHz-2.52 THz, sensing at room temperature is demonstrated using a hemispherical silicon lens-coupled diode of an asymmetrically-shaped bow-tie geometrical form. The device is fabricated from an MBE-grown In(0.54)Ga(0.46)As wafer as mesas of 3 µm depth produced by wet etching. The detector exhibits voltage sensitivity about 5 V/W below 1 THz.
Author(s)