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Influence of structure geometry on THz emission from Black Silicon surfaces fabricated by reactive ion etching

 
: Blumröder, U.; Zilk, M.; Hempel, H.; Hoyer, P.; Pertsch, T.; Eichberger, R.; Unold, T.; Nolte, S.

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Optics Express 25 (2017), No.6, pp.6604-6620
ISSN: 1094-4087
English
Journal Article, Electronic Publication
Fraunhofer IOF ()

Abstract
The influence of structure geometry on THz emission from Black Silicon (BS) surfaces fabricated by reactive ion etching (RIE) has been investigated by a comprehensive study including optical simulations, optical-pump THz probe and THz emission studies. A strong enhancement of THz emission is observed with increasing structure depth, which is mainly related to the increased number of carriers created within the silicon needles and not due to the overall absorption enhancement as previously claimed for silicon nanowires.

: http://publica.fraunhofer.de/documents/N-462029.html