Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Comparison of a 35-nm and a 50-nm gate-length metamorphic HEMT technology for millimeter-wave low-noise amplifier MMICs

 
: Thome, Fabian; Leuther, Arnulf; Massler, Hermann; Schlechtweg, Michael; Ambacher, Oliver

:
Postprint urn:nbn:de:0011-n-4587640 (1.3 MByte PDF)
MD5 Fingerprint: 30a58ae2bb03d16189ae2c957ab31128
© IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Created on: 25.11.2017


Shiroma, W. (Ed.) ; Institute of Electrical and Electronics Engineers -IEEE-:
IEEE MTT-S International Microwave Symposium, IMS 2017 : 06-08 Juni 2017, Honolulu, Hawaii
Piscataway, NJ: IEEE, 2017
ISBN: 978-1-5090-6360-4
ISBN: 978-1-5090-6361-1
pp.752-755
International Microwave Symposium (IMS) <2017, Honolulu/Hawaii>
European Commission EC
H2020; 730562; RadioNet
Advanced Radio Astronomy in Europe
English
Conference Paper, Electronic Publication
Fraunhofer IAF ()
high-electron-mobility transistor (HEMT); low-noise amplifiers (LNAs); millimeter-wave integrated circuit (MMIC); E-band; V-band; W-band

Abstract
Based on two low-noise amplifier (LNA) millimeterwave integrated circuits (MMICs), this paper reports on a comparison between a 35-nm and a 50-nm gate-length metamorphic high-electron-mobility transistor technology. The LNA targets applications in an extended W-band with an operating frequency between 67-116 GHz. Both MMICs yield an

: http://publica.fraunhofer.de/documents/N-458764.html