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Miniaturized waveguide-integrated p-i-n photodetector with 120-GHz bandwidth and high responsivity

: Beling, A.; Bach, H.-G.; Mekonnen, G.G.; Kunkel, R.; Schmidt, D.


IEEE Photonics Technology Letters 17 (2005), No.10, pp.2152- 2154
ISSN: 1041-1135
Journal Article
Fraunhofer HHI ()

A low-capacitance waveguide-integrated photodiode on InP with a minimized absorber length is presented. In order to maintain a high quantum efficiency, an optical matching layer exploiting mode beating effects is employed. Its optimization leads to a twofold enhanced external responsivity of 0.5 A/W at 1.55 µm wavelength in accordance with simulation. The reduced p-n junction capacitance enables 3 dB bandwidths up to 120 GHz mainly limited due to carrier transit time effects.