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Silicon nitride thin film with low absorption deposited by high rate reactive pulse magnetron sputtering

: Shoji, H.; Fukagawa, T.; Kato, Y.; Bartzsch, H.; Suzuki, K.; Ohno, S.; Takasawa, N.; Sato, Y.; Yoshikawa, M.

Aegerter, M.A.; Kirchhoff, V. ; Fraunhofer-Institut für Elektronenstrahl- und Plasmatechnik -FEP-, Dresden:
Advanced Coatings for Large-Area or High-Volume Products. Proceedings of the 6th International Conference on Coatings on Glass and Plastics : June 18-22, 2006, Dresden, Germany
Dresden, 2006
International Conference on Coatings on Glass and Plastics (ICCG) <6, 2006, Dresden>
Conference Paper
Fraunhofer FEP ()

To deposit silicon nitride thin film with low absorption and high refractive index by using a reactive pulse magnetron sputtering (R-PMS) machine, a dependence of the optical properties on Ar gas pressure, duty cycle, and target-substrate distance was investigated. Under optimized conditions, the film with the extinction coefficient k of 6.2x10-4 and refractive index n of 2.08 at the wavelength of 500nm was obtained. Auger Electron Spectroscopy (AES) analysis of the silicon nitride thin film showed that the ratio of Si:N was 1:1 and it was homogenous to the film depth. The LWPF (edge filter) composed of SiN and SiO2 showed good characteristics as filter.