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A 50-nm gate-length metamorphic HEMT distributed power amplifier MMIC based on stacked-HEMT unit cells

 
: Thome, Fabian; Ambacher, Oliver

:

Shiroma, W. (Ed.) ; Institute of Electrical and Electronics Engineers -IEEE-:
IEEE MTT-S International Microwave Symposium, IMS 2017 : 06-08 Juni 2017, Honolulu, Hawaii
Piscataway, NJ: IEEE, 2017
ISBN: 978-1-5090-6360-4
ISBN: 978-1-5090-6361-1
pp.1695-1698
International Microwave Symposium (IMS) <2017, Honolulu/Hawaii>
English
Conference Paper
Fraunhofer IAF ()
distributed amplifiers; HEMTs; low-noise amplifier; MMICs; power amplifiers; stacking; V-band; W-band

Abstract
This paper reports on a distributed power amplifier (DPA) millimeter-wave integrated circuit (MMIC) with high output power, high gain, and low noise figure. The ultra-wide bandwidth MMIC is based on the Fraunhofer IAF 50-nm gatelength metamorphic high-electron-mobility transistor (mHEMT) technology. The DPA uses eight stacked-HEMT unit power cells and covers a frequency range of more than 0–110 GHz. Due to the stacking approach of the unit cells it is possible to reach high output power and high gain over the designed frequency range with a single DPA stage. The average small-signal gain is 19:7 dB over the entire frequency range from 0 to 119 GHz. The noise figure yields a value between 2:5-6:4 dB for frequencies from 0 to 98 GHz. The saturated output power achieves an average value of 17:5dBm up to a frequency of 110 GHz, with a peak output power of 20 dBm.

: http://publica.fraunhofer.de/documents/N-452481.html