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A 300 GHz low-noise amplifier S-MMIC for use in next-generation imaging and communication applications

 
: Tessmann, Axel; Leuther, Arnulf; Wagner, Sandrine; Massler, Hermann; Kuri, Michael; Stulz, Hans-Peter; Zink, Martin; Rießle, Markus; Merkle, Thomas

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Shiroma, W. (Ed.) ; Institute of Electrical and Electronics Engineers -IEEE-:
IEEE MTT-S International Microwave Symposium, IMS 2017 : 06-08 Juni 2017, Honolulu, Hawaii
Piscataway, NJ: IEEE, 2017
ISBN: 978-1-5090-6360-4
ISBN: 978-1-5090-6361-1
pp.760-763
International Microwave Symposium (IMS) <2017, Honolulu/Hawaii>
English
Conference Paper
Fraunhofer IAF ()
grounded coplanar waveguide (GCPW); lownoise amplifier (LNA); metamorphic high electron mobility transistor (mHEMT); receiver circuit; submillimeter-wave monolithic integrated circuit (S-MMIC); waveguide transition; Key Publication

Abstract
A WR-3 (220- 330 GHz) low-noise amplifier (LNA) circuit has been developed for use in next-generation high resolution imaging applications and ultra-high capacity communication links. The submillimeter-wave monolithic integrated circuit (S-MMIC) was realized by using a 35 nm InAlAs/InGaAs based metamorphic high electron mobilittransistor (mHEMT) technology in combination with grounded coplanar waveguide topology (GCPW) and cascode transistors, thus leading to a very low noise figure in combination with high gain and large operational bandwidth. The packaged LNA circuit achieved a maximum gain of 29 dB at 314 GHz and more than 26 dB in the frequency range from 252 to 330 GHz. An average room temperature (T = 293 K) noise figure of 6.5 dB was measured between 280 and 330 GHz. Furthermore, the LNA circuit has been used to realize a very compact WR-3 single-chip receiver module, demonstrating an average conversion gain of 6.5 dB and a noise figure of 8.6 dB at the frequency of operation.

: http://publica.fraunhofer.de/documents/N-452478.html