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D-band low-noise amplifier MMIC with 50 % bandwidth and 3.0 dB noise figure in 100 nm and 50 nm mHEMT technology

: Weber, Rainer; Massler, Hermann; Leuther, Arnulf


Shiroma, W. (Ed.) ; Institute of Electrical and Electronics Engineers -IEEE-:
IEEE MTT-S International Microwave Symposium, IMS 2017 : 06-08 Juni 2017, Honolulu, Hawaii
Piscataway, NJ: IEEE, 2017
ISBN: 978-1-5090-6360-4
ISBN: 978-1-5090-6361-1
International Microwave Symposium (IMS) <2017, Honolulu/Hawaii>
Conference Paper
Fraunhofer IAF ()
low-noise amplifier (LNA); D-band (110-170 GHz); metamorphic high electron mobility transistor (mHEMT) noise figure (NF); millimeter-wave monolithic integrated circuit; grounded coplanar waveguide (GCPW)

We present the development of a wideband lownoise amplifier MMIC in the D-band with a smart combination of coplanar transmission lines and active devices to minimize noise figure. The identical three-stage LNA has been realized in metamorphic HEMT technologies with 100 nm and 50 nm gate length. The 50 nm LNA MMIC achieves a linear gain of 30.8 dB together with a bandwidth of 67 GHz up to 164 GHz and a noise figure of 3.0 dB. The performance of 100 nm LNA is slightly worse.