Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Annealing of aluminum implanted 4H-SiC

Comparison of furnace and lamp annealing
Ausheilen von Aluminium implantiertem 4H-SiC: Vergleich von Ofen- und Lampensystem
 
: Rambach, M.; Bauer, A.J.; Frey, L.; Friedrichs, P.; Ryssel, H.

:

Nipoti, R.:
Silicon carbide and related materials 2004 : ECSCRM 2004 ; proceedings of 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4, 2004, Bologna, Italy
Uetikon-Zürich: Trans Tech Publications, 2005 (Materials Science Forum 483/485)
ISBN: 0-87849-963-6
pp.621-624
European Conference on Silicon Carbide and Related Materials (ECSCRM) <5, 2004, Bologna>
English
Conference Paper
Fraunhofer IISB ()

Abstract
Furnace annealing and lamp annealing of aluminum implanted layers in 4H silicon carbide (SiC) were investigated with respect to surface degradation and electrical parameters. A sheet resistance of about 20k&OHM;/&SQU; was obtained for an aluminum implantation dose of 1.2.&BULL; 10(11)cm(-2) and annealing in the furnace at 1700&DEG; C for 30min. For the same implantation dose, lamp annealing at 1770&DEG; C for 5min resulted in a three times higher sheet resistance of 60k&OHM;/&SQU;. The surface roughness was best for the lamp system and stayed below 1nm for Al doses lower than 1&BULL; 10(15)cm(-2).

: http://publica.fraunhofer.de/documents/N-44537.html