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Annealing of aluminum implanted 4H-SiC

Comparison of furnace and lamp annealing
Ausheilen von Aluminium implantiertem 4H-SiC: Vergleich von Ofen- und Lampensystem
: Rambach, M.; Bauer, A.J.; Frey, L.; Friedrichs, P.; Ryssel, H.


Nipoti, R.:
Silicon carbide and related materials 2004 : ECSCRM 2004 ; proceedings of 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4, 2004, Bologna, Italy
Uetikon-Zürich: Trans Tech Publications, 2005 (Materials Science Forum 483/485)
ISBN: 0-87849-963-6
European Conference on Silicon Carbide and Related Materials (ECSCRM) <5, 2004, Bologna>
Conference Paper
Fraunhofer IISB ()

Furnace annealing and lamp annealing of aluminum implanted layers in 4H silicon carbide (SiC) were investigated with respect to surface degradation and electrical parameters. A sheet resistance of about 20k&OHM;/&SQU; was obtained for an aluminum implantation dose of 1.2.&BULL; 10(11)cm(-2) and annealing in the furnace at 1700&DEG; C for 30min. For the same implantation dose, lamp annealing at 1770&DEG; C for 5min resulted in a three times higher sheet resistance of 60k&OHM;/&SQU;. The surface roughness was best for the lamp system and stayed below 1nm for Al doses lower than 1&BULL; 10(15)cm(-2).