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Implantation and annealing of aluminum in 4H silicon carbide

Implantation und Ausheilen von Aluminium in 4H Siliciumcarbid
 
: Rambach, M.; Frey, L.; Bauer, A.J.; Ryssel, H.

:

Chen, L.J.:
Ion implantation technology. Proceedings of the 15th International Conference on Ion Implantation Technology 2004 : 25 - 27 October 2004, Taipei, Taiwan, Republic of China
Amsterdam: North-Holland, 2005 (Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms 237.2005,1/2)
pp.68-71
International Conference on Ion Implantation Technology (IIT) <15, 2004, Taipei>
English
Conference Paper
Fraunhofer IISB ()

: http://publica.fraunhofer.de/documents/N-44536.html