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RF-MEMS technology for future mobile and high-frequency applications: Reconfigurable 8-Bit power attenuator tested up to 110 GHz

: Iannacci, J.; Huhn, M.; Tschoban, C.; Pötter, H.


IEEE Electron Device Letters 37 (2016), No.12, pp.1646-1649
ISSN: 0741-3106
ISSN: 0193-8576
Journal Article
Fraunhofer IZM ()

In this letter, we present and test-to the best of our knowledge, for the first time-, an 8-bit (256-state) reconfigurable RF-MEMS attenuator, from 10 MHz up to 110 GHz, realized in the CMM-FBK technology. Resistive loads, in series and shunt configuration, are selectively inserted on the RF line by means of electrostatic MEMS ohmic switches. The network exhibits several attenuation levels in the range of -10/-45 dB that are rather flat up to 50 GHz, and a certain number of configurations with VSWR smaller than 4 from nearly dc up to 110 GHz, and better than 2 on a frequency span of ~80 GHz.