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Local solar cell efficiency analysis performed by injection-dependent PL imaging (ELBA) and voltage-dependent lock-in thermography (Local I-V)

: Breitenstein, O.; Frühauf, F.; Bauer, J.; Schindler, F.; Michl, B.

Fulltext (PDF; )

Energy Procedia 92 (2016), pp.10-15
ISSN: 1876-6102
International Conference on Crystalline Silicon Photovoltaics (SiliconPV) <6, 2016, Chambéry>
Journal Article, Conference Paper, Electronic Publication
Fraunhofer ISE ()

In this contribution two methods for performing local efficiency analysis of solar cells are compared with each other by applying them to a solar cell and a neighboring wafer. The first method called "ELBA" is based on injection-dependent photoluminescence (PL) imaging of a passivated wafer. The second method called "Local I-V" is based on voltage-dependent dark lock-in thermography (DLIT) on a solar cell. The results of both methods with respect to the influence of the bulk on the local solar cell parameters are comparable with each other. However, since only "Local I-V" is investigating a finished solar cell, it may image also local ohmic shunts, inhomogeneous front- and backside and depletion region recombination, and Rs effects, whereas "ELBA" is suited for assessing bulk-related efficiency losses in detail, which are not concealed by the aforementioned cell-related loss mechanisms in this method.