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Application of GaN power transistors in a 2.5 MHz LLC DC/DC converter for compact and efficient power conversion

 
: Armbruster, C.; Hensel, A.; Wienhausen, A.H.; Kranzer, D.

:

Institute of Electrical and Electronics Engineers -IEEE-:
EPE 2016, ECCE Europe, 18th European Conference on Power Electronics and Applications : Karlsruhe, Germany, 5 -9 September, 2016, USB-Stick
Piscataway, NJ: IEEE, 2016
ISBN: 978-90-75815-25-2
ISBN: 978-9-0758-1524-5
ISBN: 978-1-5090-1410-1
7 pp.
European Conference on Power Electronics and Applications (EPE) <18, 2016, Karlsruhe>
English
Conference Paper
Fraunhofer ISE ()

Abstract
In this work a demonstrator with a switching frequency up to 2.5 MHz is shown. These comparatively high frequencies reduce the weight and the system costs of the resonant 3-kW-DC-DC-converter. The electrical properties of the implemented Gallium Nitride (GaN) power transistors enable high switching frequencies while maintaining high efficiency. The presented converter has a power density of approximately 3 W/cm3. The total efficiency of the converter is higher than 90 % for all operation points above 1/5 of the nominal load. Exceptionally high efficiency of 94.5 % can be reached at half of the nominal load and a switching frequency of 2 MHz. Possible improvements are defined and could be reached by adding a continuous dead time control as well as adapting the driver circuit of the synchronous rectification.

: http://publica.fraunhofer.de/documents/N-444958.html