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High work function metal oxides for the hole contact of silicon solar Cells

: Bivour, M.; Temmler, J.; Zähringer, F.; Glunz, S.; Hermle, M.


Institute of Electrical and Electronics Engineers -IEEE-:
IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 : 5-10 June 2016, Portland, Or.
Piscataway, NJ: IEEE, 2016
ISBN: 978-1-5090-2724-8 (Electronic)
ISBN: 978-1-5090-2725-5 (Print on Demand)
Photovoltaic Specialists Conference (PVSC) <43, 2016, Portland/Or.>
Conference Paper
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Photovoltaik; Silicium-Photovoltaik; Herstellung und Analyse von hocheffizienten Solarzellen

The applicability of molybdenum, tungsten and vanadium oxide as a hole contact for silicon wafer based solar cells is explored. The Si heterojunctions for which these materials are in direct contact with the c-Si absorber, featuring an additional a-Si:H passivation layer or where these materials are used as an additional contact layer in-between the TCO / a-Si:H(p) Schottky contact are addressed. Compared to the standard TCO / a-Si:H(p) / a-Si:H(i) / c-Si heterojunction an efficiency (1 %abs) and fill factor gain (1.5 %abs) is obtained if a-Si:H(p) is replaced by molybdenum and if tungsten oxide is applied as an additional contact layer at the TCO / a-Si:H(p) contact. For the simple structure without intrinsic and doped a-Si:H and tungsten or vanadium oxide in direct contact to the c-Si absorber, efficiencies comparable to the reference were obtained.