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Process control of high rate microcrystalline silicon based solar cell deposition by optical emission spectroscopy

: Kilper, T.; Donker, M.N. van den; Carius, R.; Rech, B.; Bräuer, G.; Repmann, T.

Aegerter, M.A.; Kirchhoff, V. ; Fraunhofer-Institut für Elektronenstrahl- und Plasmatechnik -FEP-, Dresden:
Advanced Coatings for Large-Area or High-Volume Products. Proceedings of the 6th International Conference on Coatings on Glass and Plastics : June 18-22, 2006, Dresden, Germany
Dresden, 2006
International Conference on Coatings on Glass and Plastics (ICCG) <6, 2006, Dresden>
Conference Paper
Fraunhofer IST ()
Fraunhofer FEP ()

Silicon thin-film solar cells based on microcrystalline silicon (µc-Si:H) were prepared in a 30x30 cm3 PECVD reactor at 13.56 and 40.68 MHz plasma excitation frequency. Plasma emission was recorded by optical emission spectroscopy during µc-Si:H absorber layer deposition at deposition rates between 0.5 and 2.5 nm/s. The time course of SiH* and Hß emission indictaes strong drifts in the process conditions particularly at low total gas flow. By modifying plasma ignition conditons and by grading the SiH4 gas flow, the observed process drifts can be successfully suppressed resulting in advanced µc-Si:H solar cell efficiencies and an efficient usage of the process gas.