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Triple-junction quantum-well solar cells in commercial production

: Browne, B.; Lacey, J.; Tibbits, T.; Bacchin, G.; Wu, T.-C.; Liu, J.Q.; Chen, X.; Rees, V.; Tsai, J.; Werthen, J.-G.


Dimroth, F. ; American Institute of Physics -AIP-, New York:
9th International Conference on Concentrator Photovoltaic Systems, CPV 2013 : 15–17 April 2013, Miyazaki, Japan
New York, N.Y.: AIP Press, 2013 (AIP Conference Proceedings 1556)
ISBN: 978-0-7354-1182-1
International Conference on Concentrator Photovoltaic Systems (CPV) <9, 2013, Miyazaki>
Conference Paper
Fraunhofer ISE ()

III-V InGaP/InGaAs/Ge triple junction solar cells have been developed which incorporate quantum wells into the InGaAs and InGaP junctions. Characterization of such devices shows an absolute efficiency gain of up to 2% with Voc exceeding that of non-QW devices. Cells grown on 6â² wafers with quantum wells in the InGaAs junction are now commercially available with median efficiencies above 41%.