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  4. Thermal stability and failure mechanism of schottky gate AlGaN/GaN HEMTs
 
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2017
Journal Article
Title

Thermal stability and failure mechanism of schottky gate AlGaN/GaN HEMTs

Abstract
This paper investigates the electrothermal stability and the predominant defect mechanism of a Schottky gate AlGaN/GaN HEMT. Calibrated 3-D electrothermal simulations are performed using a simple semiempirical dc model, which is verified against high-temperature measurements up to 440°C. To determine the thermal limits of the safe operating area, measurements up to destruction are conducted at different operating points. The predominant failure mechanism is identified to be hot-spot formation and subsequent thermal runaway, induced by large drain-gate leakage currents that occur at high temperatures. The simulation results and the high temperature measurements confirm the observed failure patterns.
Author(s)
Mocanu, Manuela
Reutlingen University
Unger, Christian
Technical University of Dortmund
Pfost, Martin
Technical University of Dortmund
Waltereit, Patrick  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Reiner, Richard  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Journal
IEEE transactions on electron devices  
DOI
10.1109/TED.2016.2633725
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • 3-D simulation

  • destructive measurement

  • drain-gate leakage

  • electrothermal

  • failure mechanism

  • high temperature

  • semiempirical dc model

  • AlGaN/GaN HEMTs

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