Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Minority carrier recombination of ordered Ga0.51In0.49P at high temperatures

: Dagan, R.; Rosenwaks, Y.; Kribus, A.; Walker, A.; Ohlmann, J.; Dimroth, F.


Applied Physics Letters 109 (2016), No.22, Art. 222106, 5 pp.
ISSN: 0003-6951 (Print)
ISSN: 1077-3118
ISSN: 1931-9401 (online)
Journal Article
Fraunhofer ISE ()
Materialien - Solarzellen und Technologie; Photovoltaik; III-V und Konzentrator-Photovoltaik; III-V Epitaxie und Solarzellen

The minority carrier lifetime of high-quality ordered GaInP lattice matched to GaAs and the surface recombination velocity at its interface to AlInP were measured using time-resolved photo-luminescence in the temperature range of 77–500 K. The surface recombination velocity was found to be relatively low (under  500 cm/s) over the measured temperature range. The effective lifetime increased with a temperature up to around   300 K, and then decreased in the 300–500 K range. The variations in the effective lifetime, caused by the variations in the bulk lifetime, are explained by considering the separate contributions of radiative and non-radiative recombination and their respective temperature dependencies.