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Halbleiterfotodiode

Semiconductor photodiode
 
: Runge, Patrick; Beckerwerth, Tobias; Seifert, Sten

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Frontpage ()

DE 102015210343 A1: 20150604
German
Patent, Electronic Publication
Fraunhofer HHI ()

Abstract
The invention relates to a semiconductor photodiode comprising a light-absorbing layer (111); an optical waveguide (12) by means of which the light (L) can be coupled into said light-absorbing layer (111) in an evanescent manner; and a doped contact layer (113) arranged between said light-absorbing layer (111) and optical waveguide (12). According to the invention, the optical waveguide (12) is doped in at least some sections generating a diffusion barrier that counteracts diffusion of the dopant of the contact layer (113) into the optical waveguide (12). The invention also relates to a method for producing a semiconductor photodiode.

: http://publica.fraunhofer.de/documents/N-435304.html