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Growth of Ga₂O₃ by furnace oxidation of GaN studied by perturbed angular correlations

Poster presented at International Conference on Hyperfine Interactions and their Applications, HYPERFINE 2016, Leuven, Belgium, July 3-8, 2016
: Steffens, Michael; Vianden, Reiner; Pasquevich, Alberto F.

Poster urn:nbn:de:0011-n-4351435 (4.1 MByte PDF)
MD5 Fingerprint: 3722819d37299b27f5c76f02ab810d95
Created on: 16.2.2017

2016, 1 Folie
International Conference on Hyperfine Interactions and their Applications (HYPERFINE) <2016, Leuven>
Poster, Electronic Publication
Fraunhofer INT ()

Ga₂O₃ is a promising material for use in “solar-blind” UV-detectors which can be produced efficiently by oxidation of GaN. In this study we focus on the evolution of the oxide layer when GaN is heated in air. The experimental method applied is the perturbed angular correlation of γ-rays emitted by radioactive nuclides, here ¹¹¹In and ¹⁸¹Hf, which are ion implanted into the GaN samples. As the emission pattern for nuclei in GaN is clearly distinct from that of nuclei in Ga₂O₃, the fraction of probe nuclei in the oxide layer can be directly measured and allows to follow the time dependent growth of the oxide on a scale of less than 100 nm.