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Low-temperature microwave-based plasma oxidation of Ge and oxidation of silicon followed by plasma nitridation

 
: Lerch, W.; Schick, T.; Sacher, N.; Kegel, W.; Niess, J.; Czernohorsky, M.; Riedel, S.

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Roozeboom, F. ; Electrochemical Society -ECS-, Electronics and Photonics Division:
Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6 : Part of the 229th Meeting of the Electrochemical Society held at the Hilton Bayfront and the San Diego Convention Center from May 29-June 2, 2016
Pennington, NJ: ECS, 2016 (ECS transactions 72.2016, Nr.4)
ISBN: 978-1-62332-356-1
ISBN: 978-1-60768-714-6
pp.101-114
International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications <6, 2016, San Diego/Calif.>
Electrochemical Society (ECS Meeting) <229, 2016, San Diego/Calif.>
English
Conference Paper
Fraunhofer IPMS ()

Abstract
In the semiconductor industry Germanium is expected as the promising channel material for future high-mobility CMOS transistors because of its highest hole mobility among common elemental and compound semiconductors, and an electron mobility that is two times larger than that of Si. This article shows that oxides can be grown and/or in a subsequent process step nitridized for planar Ge and Si devices at very low temperatures (T < 460°C). The stable oxide growth on Germanium through plasma processing is studied as a function of relevant processing parameters like time, gaseous ambient etc. For Silicon the bonding structure of pure and nitridized low-temperature grown SiO2 is analyzed, followed by an electrical characterization of 0.8 to 1.2 nm interfacial layers on Si.

: http://publica.fraunhofer.de/documents/N-435024.html