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Compact power electronic modules realized by PCB embedding technology

: Löher, T.; Karaszkiewicz, S.; Böttcher, L.; Ostmann, A.


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Components, Packaging, and Manufacturing Technology Society:
IEEE CPMT Symposium Japan, ICSJ 2016 : Kyoto, Japan, 7-9 November 2016
Piscataway, NJ: IEEE, 2016
ISBN: 978-1-5090-2037-9
ISBN: 978-1-5090-2038-6
IEEE CPMT Symposium Japan (ICSJ) <2016, Kyoto>
Conference Paper
Fraunhofer IZM ()

Power electronics packaging with a high level of compactness, robustness and versatility has recently become the focus of many technology development projects. In Europe main drivers for such efforts are e-mobility and 'green' energy harvesting, which are promoted by European Commission and national authorities. One promising approach to realize a substantial level of size reduction and process flexibility in the packaging of power electronic systems is the embedding into the build-up layers of printed circuit boards. Conventional printed circuit board embedding-for low power applications-has meanwhile reached a considerable level of maturity and the number of products shipped per month are in the tens of millions. Using embedding technology for power electronic devices, however, is still challenging in many aspects. First of all for power applications the embedded system layout has to account for high currents and/or voltages and at the same time has to provide means to facilitate the power dissipation from the embedded components. PCB-substrates and modules therefore contain conductor traces with large cross sections and/or massive copper and ceramic structures in order to enable the required heat spreading. Such constructions are composed of materials with different CTEs. As a result considerable stresses prevails in the build-up layers. Since contrary to conventional PCBs the build-up of power modules are non-symmetrical a careful layout of embedded modules is necessary in order to avoid warpage of the package. Embedded power electronic components are semiconductor dies on the basis of silicon, silicon carbide and gallium nitride. The full area silver on the drain contact is compliant with the embedding approach. The gate and source contacts have to be reinforced by ten to fifteen micrometers copper.