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Reliability improvements of TiN/Al2O3/TiN for linear high voltage metal-insulator-metal capacitors using an optimized thermal treatment

 
: Lefevre, A.; Ferreira, D.; Veillerot, M.; Barnes, J.-P.; Parat, G.; Czernohorsky, M.; Lallemand, F.

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Journal of vacuum science and technology B. Microelectronics and nanometer structures 35 (2017), No.1
ISSN: 0734-211X
ISSN: 1071-1023
ISSN: 2166-2746
ISSN: 2166-2754
English
Journal Article
Fraunhofer IPMS ()

Abstract
Metal–insulator–metal (MIM) capacitors with TiN and high thickness of Al2O3 above 50 nm were fabricated to address high voltage (>30 V) and linear capacitor applications. Atomic layer deposition is used to deposit both TiN and Al2O3 to guarantee a good composition and thickness control. The impact of the deposition process and post-treatment condition on the MIM capacitor's breakdown voltage is studied and correlated with time of flight-secondary ion mass spectrometry (ToF-SIMS). Higher deposition temperature and thermal treatment of TiN and Al2O3 after deposition increase breakdown voltage and improve uniformity. ToF-SIMS demonstrates that Al2O3 higher deposition temperature or rapid thermal processing annealing reduce the diffusion of TiN in Al2O3 leading to thinner TiN/Al2O3 interface layers that influence breakdown voltage and uniformity.

: http://publica.fraunhofer.de/documents/N-434844.html