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Silicon integrated RC snubbers for applications up to 900V with reduced mechanical stress and high manufacturability

Silicium-integrierter RC-Snubber für Anwendungen bis 900V mit reduziertem mechanischen Stress und hoher Fertigungstauglichkeit
 
: Krach, Florian; Thielen, Nils; Heckel, Thomas; Bauer, Anton J.; Erlbacher, Tobias; Frey, Lothar

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Institute of Electrical and Electronics Engineers -IEEE-:
74th Device Research Conference, DRC 2016. Conference Digest : June 19-22, 2016, Newark, Delaware, USA
Piscataway, NJ: IEEE, 2016
ISBN: 978-1-5090-2829-0 (Print)
ISBN: 978-1-5090-2828-3 (Online)
ISBN: 978-1-5090-2827-6
2 pp.
Device Research Conference (DRC) <74, 2016, Newark/DE>
English
Conference Paper
Fraunhofer IISB ()
capacitance; electric power systems; Electrolysis; electromagnetic pulse; impedance spectrum; manufacturability; mechanical stress; module performance; monolithically integrated; operating voltage; passive snubbers; reliable operatio

Abstract
Passive snubber networks are especially needed in fast switching power modules to prevent overvoltage from hard switching and to minimize electromagnetic interference [1]. In a half-bridge circuit as shown in Fig. 1 (a) dissipative RC snubber networks are beneficial over single pulse capacitors as they do not generate a resonant pole in the impedance spectrum, which can be seen in Fig. 1 (b). As only a small capacitance (e.g. 4 nF) is needed to reduce the overvoltage (Fig. 1 (c)), a monolithically integrated RC snubber can be realized on a silicon chip and packaged directly on the power module substrate. An improved module performance was already demonstrated for chip snubbers with 200 V operating voltage [2]. This work shows how the device design was enhanced for high manufacturability and reliable operations in a voltage range from 600 V to 900 V.

: http://publica.fraunhofer.de/documents/N-431782.html