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Ion implanted 4H-SiC UV pin-diodes for solar radiation detection - simulation and characterization

Ionenimplantierte 4H-SiC UV pin-dioden zur Sonnenstrahlungsdetektion - Simulation and Charakterisierung
 
: Matthus, Christian D.; Erlbacher, Tobias; Burenkov, Alexander; Bauer, Anton J.; Frey, Lothar

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Roccaforte, F.:
Silicon Carbide and Related Materials 2015 : Selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy
Dürnten: Trans Tech Publications, 2016 (Materials Science Forum 858)
ISBN: 978-3-0357-1042-7 (Print)
ISBN: 978-3-0357-2042-6 (CD-ROM)
ISBN: 978-3-0357-3042-5 (eBook)
pp.1032-1035
International Conference on Silicon Carbide and Related Materials (ICSCRM) <16, 2015, Giardini Naxos>
European Commission EC
FP7-ICT; 611887; MSP
Multi-Sensor-Platform for Smart Building Management
English
Conference Paper
Fraunhofer IISB ()
4H-SiC; ion implantation; PIN-Diode; spectral response; UV; UV detection; characterization; diodes; ion implantation; semiconductor diodes; spectrum analysis; radiation detection; solar UV radiation; UV illuminations

Abstract
This paper describes the fabrication, characterization, and simulation of 4H-SiC pinphotodiodes for solar UV radiation detection. The devices were produced with an aluminum implanted emitter unlike most previously published detectors which use epitaxy for all applied doping regions (see e.g. [1,2]). They were electrically characterized at different temperatures with and without UV-illumination and afterwards a spectral analysis of the photocurrent was performed. A quantum efficiency up to 55% at 260 nm will be shown. Furthermore, the capability of the diodes for visible blind sun UV monitoring e.g. within a building, is demonstrated.

: http://publica.fraunhofer.de/documents/N-431770.html