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3D simulation of light exposure and resist effects in laser direct write lithography

 
: Onanuga, Temitope; Erdmann, Andreas

:

Bär, E. ; Institute of Electrical and Electronics Engineers -IEEE-; Deutsche Forschungsgemeinschaft -DFG-, Bonn:
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2016 : September 6-8, 2016, Nuremberg, Germany
Piscataway, NJ: IEEE, 2016
ISBN: 978-1-5090-0818-6 (Online)
ISBN: 978-1-5090-0816-2 (CD-ROM)
ISBN: 978-1-5090-0819-3
ISBN: 978-1-5090-0817-9
pp.129-132
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) <2016, Nuremberg>
English
Conference Paper
Fraunhofer IISB ()
simulation; laser direct write; lithography; polymerization model; resist development

Abstract
We present a simulation approach that includes light and photoresist effects in laser direct write lithography (LDWL). This simulation flow allows to predict how the fabricated structure changes with variation in the process parameters. Using this simulation approach, we compute the change in feature size or critical dimension (CD) versus laser power and writing speed. The obtained simulation result agrees with experimental results. We extend this simulation method to predict the axial resolution of woodpile like structures and mesa arrays, which provide interesting patterns for metamaterials.

: http://publica.fraunhofer.de/documents/N-431765.html