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Active single pole double throw switches for D-band applications

: Müller, D.; Lewark, U.; Tessmann, A.; Leuther, A.; Zwick, T.; Kallfass, I.


Lin, J. (Ed.) ; Institute of Electrical and Electronics Engineers -IEEE-:
IEEE MTT-S International Microwave Symposium, IMS 2016 : 22- 27 May 2016, San Francisco, California, USA
Piscataway, NJ: IEEE, 2016
ISBN: 978-1-5090-0698-4
ISBN: 978-1-5090-0699-1
4 pp.
International Microwave Symposium (IMS) <2016, San Francisco/Calif.>
Conference Paper
Fraunhofer IAF ()
active switch; single pole double throw (SPDT); monolithic microwave integrated circuit (MMIC); GaAs mHEMT

This paper presents active single pole double throw (SPDT) switches, based on a novel compact transistor unit cell, working in the D-Band (110-170GHz) frequency range. Two switches for the transmit- and receive side were designed and manufactured using a GaAs mHEMT process. The unit cell consists of the integration of a common-gate stage for loss compensation and a shunt-stage to achieve high isolation. On-wafer measurement results of the processed monolithic microwave integrated circuits (MMICs) SPDT switches show a maximum gain of 3,2dB and 3,3dB with 3dB bandwidths of 47GHz and 38,7GHz, respectively. Within the 3dB bandwidth the solation of both switches is higher than 21,5dB.