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LED-retrofit based on AlGaN/GaN-on-Si field-effect transistor drivers

 
: Zibold, A.; Kunzer, M.; Reiner, R.; Weiss, B.; Waltereit, P.; Quay, R.; Wagner, J.; Ambacher, O.

Luger Research e.U., Insitute for Innovation & Technology:
LED Lighting Technologies - Smart Technologies for Lighting Innovations : LED Professional Symposium + Expo, Bregenz, September 20, 2016
Dornbirn: Luger Research, 2016
5 pp.
LED Professional Symposium + Expo <2016, Bregenz>
English
Conference Paper
Fraunhofer IAF ()

Abstract
This work demonstrates the suitability of AlGaN/GaN-on-Si field effect transistors (FETs) for their use in LED drivers. The transistors are tested in an isolated buck converter and an efficiency of 86% is measured for the full converter circuit. The driver circuit is combined with an LED module based on a laser-structured Aluminium Nitride (AIN) ceramic board onto which 21 high power white-emitting LED chips are mounted. From this combination an LED-Retrofit lamp with a total light output of 2676 lm at an efficacy level of 119lm/W. The results compare favorably to the state-of-the-art commercial solutions.

: http://publica.fraunhofer.de/documents/N-426016.html