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Cryogenic 50-nm mHEMT MMIC LNA for 67-116 GHz with 34 K noise temperature

: Kotiranta, M.; Türk, S.; Schäfer, F.; Leuther, A.; Goliasch, J.; Massler, H.; Schlechtweg, M.


Institute of Electrical and Electronics Engineers -IEEE-; European Space Agency -ESA-, Paris:
9th Global Symposium on Millimeter-Waves (GSMM 2016) & 7th ESA Workshop on Millimetre-Wave Technology and Applications : 6-8 June 2016, Espoo, Finland
Piscataway, NJ: IEEE, 2016
ISBN: 978-1-5090-1349-4 (Print)
ISBN: 978-1-5090-1348-7 (Online)
3 pp.
Global Symposium on Millimeter Waves (GSMM) <9, 2016, Espoo>
Workshop on Millimetre-Wave Technology and Applications <7, 2016, Espoo>
Conference Paper
Fraunhofer IAF ()
cryogenic low-noise amplifier (LNA); metamorphic high electron mobility transistor; monolithic microwave integrated cicuit

This paper reports the development of a cryogenic wideband low-noise amplifier based on a 50-nm metamorphic high-electron-mobility transistor process on gallium arsenide substrates. The amplifier exhibits an average gain of 22.0 dB and a noise temperature of 49 K at an ambient temperature of 15 K in the frequency range 67–116 GHz. The minimum noise temperature of 34 K is reached at the frequency of 77.5 GHz. Index Terms-cryogenic low-noise amplifier (LNA), metamorphic high-electron-mobility transistor (mHEMT), monolithic microwave integrated circuit (MMIC).