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Post drain-stress behavior of AlGaN/GaN-on-Si MIS-HEMTs

: Jauss, S.A.; Kilian, S.; Schwaiger, S.; Noll, S.; Daves, W.; Ambacher, O.


Solid-State Electronics 125 (2016), pp.125-132
ISSN: 0038-1101
European Solid-State Device Research Conference (ESSDERC) <45, 2015, Graz>
Journal Article, Conference Paper
Fraunhofer IAF ()
GaN; HEMT; trapping; stress

In this paper we investigate the drain stress behavior and charge trapping phenomena of GaN-based high electron mobility transistors (HEMTs). We fabricated GaN-on-Si MISHEMTs with different dielectric stacks in the gate and gate-drain access region and performed interface characterization and stress measurements for slow traps analysis. 2-di-mensional TCAD simulations were used to compare the electrical field distributions of the devices in OFF-state stress condition. Our results show a high dependency of the on-resistance increase on interfaces in the gate-drain access re-gion. The dielectric interfaces near the channel play a significant role for long term high voltage stress and regeneration of the device.