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Carbon-hydrogen complexes in n- and p-type SiGe-alloys studied by Laplace deep level transient spectroscopy

: Stübner, Ronald; Kolkovsky, Vladimir; Weber, Jörg; Abrosimov, N.V.


Pichler, Peter (Hrsg.):
Gettering and defect engineering in semiconductor technology XVI : Selected, peer reviewed papers from the GADEST 2015: Gettering and Defect Engineering in Semiconductor Technology, September 20-25, 2015, Bad Staffelstein, Germany
Dürnten: Trans Tech Publications, 2016 (Diffusion and defect data. B, Solid state phenomena 242)
ISBN: 978-3-03835-608-0
ISBN: 978-3-0357-0083-1
DOI: 10.4028/
International Conference on Gettering and Defect Engineering in Semiconductor Technology (GADEST) <16, 2015, Bad Staffelstein>
Conference Paper
Fraunhofer IPMS ()

A deep level transient spectroscopy (DLTS) study on n- and p-type diluted Si1-xGexalloys (x=0, 0.011, 0.026, 0.046, and 0.070) is presented. Defect levels of several carbon-hydrogen(CH) complexes are observed. The high-resolution Laplace-DLTS technique allows us to detect configurations of defects which contain different numbers of Ge atoms in the first and second nearest neighbourhood of the CH complexes. The electrical properties of the defects will be analysed and their origin will be discussed.