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A Q-band power amplifier MMIC using 100 nm AlGaN/GaN HEMT

: Feuerschütz, P.; Friesicke, C.; Quay, R.; Jacob, A.F.

European Microwave Association:
11th European Microwave Integrated Circuits Conference, EuMIC 2016. Proceedings : European Microwave Week (EuMW) 2016, 3-4 Oct 2016, London, UK
London: Horizon House, 2016
ISBN: 978-2-87487-044-6
European Microwave Integrated Circuits Conference (EuMIC) <11, 2016, London>
European Microwave Week (EuMW) <19, 2016, London>
Conference Paper
Fraunhofer IAF ()
gallium nitride; millimeter wave integrated circuits; Q-band; satellite communication

The next generation of satellite communication systems at Q/V-band increases the need for highly performing MMIC technology. Gallium nitride high electron mobility transistors (GaN HEMTs) can provide high power density even at millimeter wave frequencies. Targeting a band of 35 – 40 GHz, a power amplifier MMIC using second-harmonic input and output matching is designed, manufactured, and measured. The presented single-transistor MMIC exhibits a small-signal gain of more than 9 dB at 38 GHz and delivers 269mW (24.3 dBm) of output power at 38 GHz, which results in a power density of over 1.2 W/mm. The amplifier shows a drain efficiency of up to 33% and a power-added efficiency (PAE) of up to 22 %.