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Dual-gate HEMT parameter extraction based on 2.5D multiport simulation of passive structures

: Raay, F. van; Quay, R.; Schwantuschke, D.; Ohlrogge, M.; Peschel, D.; Schlechtweg, M.; Ambacher, O.

European Microwave Association:
11th European Microwave Integrated Circuits Conference, EuMIC 2016. Proceedings : European Microwave Week (EuMW) 2016, 3-4 Oct 2016, London, UK
London: Horizon House, 2016
ISBN: 978-2-87487-044-6
European Microwave Integrated Circuits Conference (EuMIC) <11, 2016, London>
European Microwave Week (EuMW) <19, 2016, London>
Conference Paper
Fraunhofer IAF ()
dual-gate HEMT; cascode HEMT; parasitic elements; parameter extraction

A new versatile parasitic network extraction method for microwave dual-gate and cascode HEMTs is presented which is based on 2.5D EM simulation of the passive metallization structures. After port count reduction and offset capacitance correction at the internal FET reference planes, a scalable matrix shell model is obtained. The intrinsic FET model is extracted from a separate characterization of a common-source FET. The matrix shell model is compared to a fully distributed model and to measured S-parameters for AlGaN/GaN HEMTs with a gate length of 0.1 µm.