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A GaN-based 10.1MHz class-F-1 300 W continuous wave amplifier targeting industrial power applications

: Maier, F.; Krausse, D.; Gruner, D.; Reiner, R.; Waltereit, P.; Quay, R.; Ambacher, O.


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society; IEEE Solid-State Circuits Society; IEEE Microwave Theory and Techniques Society:
IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2016 : Integrated circuits in GaAs, InP, SiGe, GaN and other compound semiconductors, 23-26 October, 2016; Austin, Texas, USA
Piscataway, NJ: IEEE, 2016
ISBN: 978-1-5090-1608-2
ISBN: 978-1-5090-1609-9
ISBN: 978-1-5090-1607-5
4 pp.
Compound Semiconductor Integrated Circuit Symposium (CSIC) <39, 2016, Austin/Tex.>
Conference Paper
Fraunhofer IAF ()
high power amplifiers; effective field; HEMTs; gallium nitride

This paper investigates a novel AlGaN/GaN HEMT-based high power amplifier for continuous wave operation in industrial power applications. A GaN HEMT device with a power density of 50 W/mm² was developed to counter specific challenges in these applications. Based on RF load-pull measurements of the developed transistors an inverse class-F power amplifier with an output power of 300 W and an efficiency of 74 % at 10 MHz was implemented and investigated.