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Broadband E-band power amplifier MMIC based on an AlGaN/GaN HEMT technology with 30 dBm output power

: Schwantuschke, D.; Godejohann, B.-J.; Breuer, S.; Brueckner, P.; Mikulla, M.; Quay, R.; Ambacher, O.


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society; IEEE Solid-State Circuits Society; IEEE Microwave Theory and Techniques Society:
IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2016 : Integrated circuits in GaAs, InP, SiGe, GaN and other compound semiconductors, 23-26 October, 2016; Austin, Texas, USA
Piscataway, NJ: IEEE, 2016
ISBN: 978-1-5090-1608-2
ISBN: 978-1-5090-1609-9
ISBN: 978-1-5090-1607-5
4 pp.
Compound Semiconductor Integrated Circuit Symposium (CSIC) <39, 2016, Austin/Tex.>
Conference Paper
Fraunhofer IAF ()
E-band; gallium nitride; millimeterwave; monolithic microwave integrated circuits (MMICs); power amplifiers

This paper reports on the design of a power amplifier covering the entire E-band satellite communication bands (71-76 GHz & 81-86 GHz) and demonstrating a high saturated output power of more than 1 W across this frequency range of interest. The circuit was fabricated by using an advanced 100 nm GaN high-electron-mobility transistor technology with an AlN-interlayer epitaxy, demonstrating a transit frequency ft of more than 100 GHz and a power density as high as 1.9 W/mm at 94 GHz in continuous-wave load-pull operation. A state-space approach is applied for the device modeling, which enables a successful first-pass circuit design.