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Monolithically-integrated power circuits in high-voltage GaN-on-Si heterojunction technology

 
: Reiner, R.; Waltereit, P.; Weiss, B.; Mönch, S.; Wespel, M.; Müller, S.; Quay, R.; Ambacher, O.

Benda, V. ; Institution of Engineering and Technology -IET-; Institute of Electrical and Electronics Engineers -IEEE-, Czechoslovakia Section:
13th International Seminar on Power Semiconductors, ISPS 2016. CD-ROM : Prague, 31 Aug - 02 Sep 2016
Prague, 2016
ISBN: 978-80-01-05998-2
10 pp.
International Seminar on Power Semiconductors (ISPS) <13, 2016, Prague>
English
Conference Paper
Fraunhofer IAF ()
gallium nitride; HEMTs; power integrated circuits; monolithic integrated circuits; wide band gap semiconductors; III-V semiconductors; GaN-ICs; HFETs

Abstract
This paper presents monolithically-integrated power circuits, fabricated in a high-voltage GaN-on-Si heterojunction technology. Different advanced concepts are presented and compared to solutions found in literature. Fast switching rates are demonstrated on a monolithic power circuit with integrated gate driver. A highly-linear temperature sensor is integrated in a GaN-HEMT power device with a breakdown voltage of 600 V and on-state resistance of 53 mOMEGA. An area-efficient HEMT structure with integrated free-wheeling diodes is presented. This structure is applied in a monolithic multilevel chip, as well as in a 600 V-class half-bridge chip. The performance of the half-bridge is demonstrated for a buck converter from 400 V to 200 V and with a switching frequency of 1.2 MHz.

: http://publica.fraunhofer.de/documents/N-423571.html