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A possible explanation of the record electrical performance of silicon nanowire tunnel FETs with silicided source contact

 
: Burenkov, Alex; Lorenz, Juergen

:

Bär, E. ; Institute of Electrical and Electronics Engineers -IEEE-; Deutsche Forschungsgemeinschaft -DFG-, Bonn:
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2016 : September 6-8, 2016, Nuremberg, Germany
Piscataway, NJ: IEEE, 2016
ISBN: 978-1-5090-0818-6 (Online)
ISBN: 978-1-5090-0816-2 (CD-ROM)
ISBN: 978-1-5090-0819-3
ISBN: 978-1-5090-0817-9
pp.85-88
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) <2016, Nuremberg>
English
Conference Paper
Fraunhofer IISB ()
nanowire tunnel FET; silicon; silicide; collumnar; transfer characteristics

Abstract
Some experimentally implemented silicon nanowire tunnel FETs with silicided source contacts show an unexpectedly high electrical performance. Simulations using state-of-the-art simulation models and assuming usual device geometries cannot explain the high performance of these transistors: Conventional simulations of such tunnel FETs predict an on-state current which is several orders of magnitude lower than measured. In this work we show that thin silicide nano-spikes extending from the silicided source contact into the silicon channel of the nanowire tunnel FET could be a possible explanation of the high tunnel FET performance observed experimentally.

: http://publica.fraunhofer.de/documents/N-423484.html