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Theoretical investigation of in situ k-restore processes for damaged ultra-low-k dielectrics

 
: Förster, A.; Wagner, C.; Schuster, J.; Gemming, S.

:

Microelectronic engineering 156 (2016), pp.121-125
ISSN: 0167-9317
Materials for Advanced Metallization Conference (MAM) <2015, Grenoble>
International Interconnect Technology Conference (IITC) <2015, Grenoble>
English
Journal Article, Conference Paper
Fraunhofer ENAS ()

Abstract
Ultra-low-k (ULK) materials are essential for today's production of integrated circuits (ICs). However, during the manufacturing process, the ULK's low dielectric constant (k-value) increases due to the replacement of hydrophobic species with hydrophilic groups. We investigate the use of plasma enhanced fragmented silylation precursors to repair this damage. The fragmentation of the silylation precursors octamethylcyclotetrasiloxane (OMCTS) and bis(dimethylamino)-dimethylsilane (DMADMS) and their possible repair reactions are studied using density functional theory (DFT) and molecular dynamics (MD) simulations.

: http://publica.fraunhofer.de/documents/N-422944.html