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Design of amorphous silicon photonic crystal-based M-Z modulator operating at 1.55 μm

: Rao, S.; Casalino, M.; Coppola, G.; Kisacik, R.; Tekin, T.; Corte, F.G.D.

Ribeiro, P.A. ; Institute for Systems and Technologies of Information, Control and Communication -INSTICC-, Setubal:
PHOTOPTICS 2016. Proceedings of the 4th International Conference on Photonics, Optics and Laser Technology : Rome, Italy, February 27-29, 2016
Setubal: SciTePress, 2016
ISBN: 978-989-758-174-8
International Conference on Photonics, Optics and Laser Technology (PHOTOPTICS) <4, 2016, Rome>
Conference Paper
Fraunhofer IZM ()

The design of an amorphous silicon-based Mach-Zehnder electro-optic modulator including two guiding pi-n structures integrated inside a two-dimensional (2-D) photonic crystal (PhC) working at 1.55 μm, is reported. Electrically induced free carrier dispersion effect in this photonic material with a very cost-effective technology, is investigated for modulation. Our numerical analysis, performed by a time-domain (FDTD)-based software, proves that the voltage-length product can be remarkably reduced by taking advantage of both the strong PhC confinement and the wide refractive index tunability of amorphous silicon.