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CNTFET-based RF electronics - State-of-the-art and future prospects

 
: Schröter, M.; Claus, M.; Hermann, S.; Tittman-Otto, J.; Haferlach, M.; Mothes, S.; Schulz, S.

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Institute of Electrical and Electronics Engineers -IEEE-:
SiRF 2016, IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems : 24-27 January 2016, JW Mariott Austin, Austin, Texas, USA; RWW 2016, Austin, Texas; digest
Piscataway, NJ: IEEE, 2016
ISBN: 978-1-5090-1688-4
ISBN: 978-1-5090-1687-7
pp.97-100
Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) <16, 2016, Austin/Tex.>
Radio & Wireless Week (RWW) <10, 2016, Austin/Tex.>
English
Conference Paper
Fraunhofer ENAS ()

Abstract
Carbon nanotube (CNT) field effect transistors (FETs) are expected to have several advantages over silicon-based FETs. While most of the literature deals with digital applications, this paper gives an overview on the present status of CNTFET technology for radio-frequency analog applications, including the respective requirements. Results for transistors and circuits achieved so far as well as possible fabrication approaches for performance improvement are discussed.

: http://publica.fraunhofer.de/documents/N-422382.html